Vertically configured chamber used for multiple processes

ABSTRACT

The present invention relates to a containment chamber that is used for carrying out multiple processing steps such as depositing on, polishing, etching, modifying, rinsing, cleaning, and drying a surface on the workpiece. In one example of the present invention, the chamber is used to electro chemically mechanically deposit a conductive material on a semiconductor wafer. The same containment chamber can then be used to rinse and clean the same wafer. As a result, the present invention eliminates the need for separate processing stations for depositing the conductive material and cleaning the wafer. Thus, with the present invention, costs and physical space are reduced while providing an efficient apparatus and method for carrying out multiple processes on the wafer surface using a containment chamber.

FIELD OF THE INVENTION

[0001] The present invention relates to methods and apparatus forcarrying out multiple processes such as depositing, plating, polishing,etching a conductive material and rinsing, cleaning, and modifying thesurface of a substrate using a vertically configured containmentchamber. More particularly, the present invention is directed to avertically configured containment chamber that can be used for carryingout a first set of processes using one section of the chamber andanother set of processes using a different section of the chamber.

BACKGROUND OF THE INVENTION

[0002] A conventional process step in the manufacturing of integratedcircuits and devices involves plating a conductive material on asemiconductor wafer or a workpiece surface. For example, an “electrochemical mechanical deposition” (ECMD) method can be used to achievesuch a result. One goal of ECMD is to uniformly fill the holes andtrenches on the wafer/workpiece surface with the conductive materialwhile maintaining the planarity of the surface. The ECMD process isgenerally performed in a chamber specifically designed for suchdeposition. A more detailed description of the ECMD method and apparatuscan be found in the co-pending U.S. application Ser. No. 09/201,929,entitled “Method and Apparatus For Electro Chemical MechanicalDeposition”, commonly owned by the assignee of the present invention.

[0003] If a conventional plating process is performed to deposit theconductive material, after performing such step in a deposition chamber,the workpiece may be transferred to another chamber for polishing (e.g.,chemical mechanical polishing). In other instances, for example, ECMD,the deposition and polishing process can be performed using a dualdepositing/polishing tool in a combined deposition/polishing chamber.

[0004] Regardless of which process used, the workpiece is nexttransferred to a rinsing/cleaning chamber after the deposition and/orpolishing steps. A robotic arm/machine that lifts the workpiece by itsedges from, for example, the deposition/polishing chamber to anotherhorizontally configured cleaning chamber can perform this transferprocess. Additionally, a workpiece cassette may be used to store theworkpiece as it is being transferred from the deposition/polishingchamber to the cleaning chamber. The workpiece surface can then becleaned using, for example, a spin, rinse, and dry process, as known inthe art.

[0005] During such transfer of the workpiece from one chamber toanother, contaminants such as particles may attach themselves on theworkpiece surface because the workpiece is exposed to the externalenvironment. The source of these contaminants may be the surroundingair, the processing facility, personnel, process chemicals, or the like.In some cases, exposing the workpiece to light between processing stepsmay not be desirable. The workpiece surface must be free of suchcontaminants; otherwise, the contaminants may affect device performancecharacteristics and may cause device failure to occur at faster ratesthan usual. Thus, such contaminants can result in defective chips, whichresults in lost revenues and low overall process yield for themanufacturer.

[0006] In the conventional method and apparatus described above, therinsing/cleaning and deposition/polishing chambers are at least twoseparate horizontally configured chambers that are located apart fromeach other. Thus, workpieces are exposed to potential contaminants asthey are transferred from one chamber to another. In addition, morephysical space in a clean room is occupied when multiple chambers arerequired. This increases the costs for manufactures as they must uselarger facilities in order to use such chambers.

[0007] Although, example here is given for carrying out thedepositing/polishing and rinsing/cleaning processes, there are othertypes of processes that are being carried out in other horizontallyconfigured chambers. These processes include etching or otherwisemodifying the workpiece surface, depositing different materials on theworkpiece surface, etc. Regardless of the specific processes that arebeing carried out in these conventional chambers, the costs associatedto operate such chambers are nevertheless very high for the reasonsmentioned above.

[0008] Therefore, there is a need for methods and apparatus for carryingout multiple processes on a workpiece using a vertically configuredchamber without exposing the workpiece to the external environment.There is also a particular need for methods and apparatus fordepositing/polishing the conductive material on the workpiece surfaceand then rinsing/cleaning such surface without exposing the workpiece tocontaminants. Accordingly, the present invention provides a verticallyconfigured containment chamber that can be used for carrying outdifferent processes on the workpiece surface. The containment chamber ofthe present invention can be specifically used for bothdepositing/polishing the conductive material and rinsing/cleaning theworkpiece surface. The present invention further provides a more costeffective, efficient, contaminant free methods and apparatus than thosecurrently available.

SUMMARY OF THE INVENTION

[0009] It is an object of the present invention to provide methods andapparatus for carrying out multiple processes in multiple sections of avertically configured containment chamber.

[0010] It is another object of the present invention to provide methodsand apparatus for carrying out multiple processes such as depositing,plating, polishing, etching, rinsing, cleaning, and modifying aconductive material and/or a substrate surface using a verticallyconfigured containment chamber.

[0011] It is yet another object of the present invention to providemethods and apparatus that deposits a conductive material on a workpiecesurface and then cleans the same surface in a vertically configuredcontainment chamber.

[0012] It is another object of the present invention to provide methodsand apparatus that deposits a conductive material on a workpiece surfaceusing electro chemical mechanical deposition and cleans the same surfaceusing a spin, rinse, and dry process in a vertically configuredcontainment chamber.

[0013] It is a further object of the present invention to providemethods and apparatus that reduces/eliminates contaminants from beingformed on the workpiece surface during multiple processing steps.

[0014] It is yet another object of the present invention to providemethods and apparatus for decreasing the physical space occupied bymultiple chambers by providing a vertically configured containmentchamber for multiple processes.

[0015] It is yet another object of the present invention to providemethods and apparatus that efficiently deposits and cleans a workpiecesurface in a vertically configured containment chamber.

[0016] These and other objects of the present invention are obtained byproviding a vertically configured containment chamber that can be usedfor multiple processes such as depositing a conductive material on theworkpiece surface and cleaning the same surface. In one specificembodiment of the present invention, an electo chemical mechanicaldeposition can be performed in the lower half of the containment chamberwhile a spin, rinse, and dry process can be performed in the upper halfof the containment chamber. A movable process/rinse guard is positionedin between the lower and upper halves of the containment chamber suchthat the two halves of the chamber are physically separated from eachother during processing in the upper half of the containment chamber.The movable process/rinse guard further prevents a cleaning solutionfrom entering the lower half of the containment chamber.

[0017] In a second embodiment of the present invention, multiple flapsare used to separate the upper and lowers halves of the containmentchamber. For example, when the flaps are in their vertical position, adepositing/polishing process can be performed in the lower half, andwhen the flaps are in their horizontal position, a rinsing/cleaningprocess can be performed in the upper half. In addition, when the flapsare in their horizontal position, loss of electrolyte solution from thecontainment chamber due to vaporization is minimized.

BRIEF DESCRIPTION OF THE DRAWINGS

[0018] These and other objects and advantages of the present inventionwill become apparent and more readily appreciated from the followingdetailed description of the presently preferred exemplary embodiments ofthe invention taken in conjunction with the accompanying drawings, ofwhich:

[0019]FIG. 1 illustrates a cross sectional view of a first preferredembodiment of the present invention for use during adepositing/polishing process;

[0020]FIG. 2 illustrates a cross sectional view of a first preferredembodiment of the present invention for use during a rinsing/cleaningprocess;

[0021]FIG. 3 illustrates a perspective view of a process guard supportmechanism in accordance with the first preferred embodiment of thepresent invention;

[0022]FIG. 4 illustrates a cross sectional view of a second preferredembodiment of the present invention for use during adepositing/polishing process;

[0023]FIG. 5 illustrates a cross sectional view of a second preferredembodiment of the present invention during the transition from adepositing/polishing process to a rinsing/cleaning process;

[0024]FIG. 6 illustrates a cross sectional view of a second preferredembodiment of the present invention for use during a rinsing/cleaningprocess;

[0025]FIG. 7 illustrates a perspective view of the upper chamber inaccordance with the second preferred embodiment of the presentinvention; and

[0026]FIG. 8 illustrates a cross sectional view of yet another preferredembodiment of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0027] The preferred embodiments of the present invention will now bedescribed with greater detail with reference to FIGS. 1-8. As describedelsewhere herein, various refinements and substitutions of the variousembodiments are possible based on the principles and teachings herein.

[0028] As noted above, conventional processing uses different processingchambers, at different times, to obtain a conductive material on thewafer surface and to rinse/clean/etch/modify/dry the same surface.Accordingly, the equipment cost needed for depositing, polishing,etching, rinsing, modifying the surface, drying, and cleaning can behigh. The present invention contemplates using one vertically configuredcontainment chamber that plates/deposits and/or polishes the conductivematerial on the workpiece/wafer, as well asrinses/cleans/etches/modifies/dries the workpiece/wafer surface. Inother words, the present invention provides a vertically configuredcontainment chamber used for carrying out multiple processes.

[0029] Furthermore, although a semiconductor wafer will now be used todescribe the preferred embodiments of the present invention, othersemiconductor workpieces such as flat panels or magnetic films may alsobe used in accordance with the present invention.

[0030]FIG. 1 illustrates a cross sectional view of a first preferredembodiment of the present invention during the deposition process. Acontainment chamber 2 includes two sections, an ECMD lower section 4 anda rinsing/cleaning top section 6. The ECMD section 4 occupies the lowerhalf of the containment chamber 2, and the cleaning section 6 occupiesthe upper half of the containment chamber 2. In the first mode ofoperation, an ECMD process is performed in the ECMD section 4, and inthe second mode of operation, a rinsing/cleaning process is performed inthe cleaning section 6.

[0031]FIG. 1 illustrates the first mode of operation in accordance withthe first preferred embodiment of the present invention. A wafer holder10 supports a wafer 12 as ECMD is performed in the ECMD section 4. Thewafer holder 10 may include a nonconductive, preferably circular, chuck14 with a cavity (not shown) that is preferably a few millimeters deepat its center and which cavity may contain a resting pad (not shown).The wafer 12 is loaded into the cavity, backside first, against theresting pad using a conventional type of transport or vacuum mechanismto ensure that the wafer 12 is stationary and secure with respect to thewafer holder 10 while in use. A shaft 16 is used to raise and lower thewafer holder 10 within the containment chamber 2. The shaft 16 isfurther adapted to move side to side and to rotate about axis 18, thusallowing the wafer holder 10 and the wafer 12 to move side to side androtate about the same axis 18. Other conventional wafer holders can beused in accordance with the present invention.

[0032] During the ECMD process, a conductive material is applied inholes, trenches, and/or other desired areas on the wafer 12 using anelectrolyte solution held in an ECMD apparatus 20. In the exampleprovided herein, the ECMD apparatus 20 includes a pad assembly 23 havinga pad 24 placed on an anode 26 for depositing and/or polishing theconductive material on the wafer 12. The electrolyte solution (notshown) may be held in the ECMD apparatus 20 or flowed through the pad24. In one embodiment, the pad 24 may include pores 25 so that theelectrolyte solution can be held and/or flowed through the pad 24. Theterm “pores” herein is broadly defined as any type of perforation in thepad 24 that allows the electrolyte to flow from the bottom surface tothe upper surface of the pad 24. Also, in the preferred embodiment, thepad 24 should be an abrasive pad or at a minimum, the pad surface facingthe wafer 12 should be abrasive.

[0033] In another embodiment, the ECMD apparatus 20 may include a padassembly having a circular or square pad mounted on a cylindrical anodethat rotates around another axis. Such apparatus is described in theco-pending U.S. application Ser. No. 09/201,929, entitled “Method andApparatus For Electro Chemical Mechanical Deposition”, commonly owned bythe assignee of the present invention. Although two embodiments of theECMD apparatus 20 are described herein, other ECMD apparatus and methodsmay be used in accordance with the present invention. What is importantto note from the previous examples is that the ECMD process is performedin the lower section of the containment chamber 2.

[0034] In the ECMD process, chemical/electrochemical etching of theworkpiece surface can also be carried out by controlling the potentialdifference between the wafer surface and the anode 26. For example, whenapplying a potential difference where the anode is more positive thanthe wafer surface, deposition may be performed. On the other hand, whenapplying a potential difference where the anode is more negative thanthe wafer surface, electrochemical etching may be performed.Furthermore, when a potential difference between the anode and the wafersurface is zero, chemical etching of the wafer surface may be performed.

[0035] Additionally, in the ECMD section 4, splashguards 22A may be usedand extend out from the inner walls of the containment chamber 2. Thesplashguards 22A prevent the electrolyte solution from exiting from theECMD section 4 to the top section of the chamber 2. Further, asdescribed in more detail below, the splashguards 22A also prevent acleaning solution from the top section of the chamber 2 from enteringthe ECMD apparatus 20.

[0036]FIG. 2 illustrates a cross sectional view of a second mode ofoperation in accordance with the first preferred embodiment of thepresent invention. The rinsing/cleaning section 6 includes the upperhalf of the containment chamber 2. The border/barrier between thecleaning section 6 and the ECMD section 4 is determined by a processguard 30 that is attached to a process guard support 31. The processguard support 31 may be in the form of a pair of tensioned cords thatare looped around idle rollers 32 b, 32 c, 32 d, and the motor drivenroller 32 a. The motor driven roller 32 a allows the process guardsupport 31 and the process guard 30 to move in and out of the chamber 2.As shown, the process guard 30 and the support 31 are positioned at anangle Z from the horizontal plane 50. In the preferred embodiment, theangle Z from a horizontal plane 50 to the plane of the process guard 30is between 5-60 degrees (or any other angle Z such that the cleaningsolution can be flowed out of the chamber 2). Such incline of theprocess guard 30 is required such that the cleaning solution can beflowed out of the containment chamber 2 after cleaning/rinsing the wafer12.

[0037] One end of the process guard 30 fits into slit 34 and the otherend into a housing 38 along the two side walls of the containmentchamber 2 such that a physical border is formed between the ECMD section4 and the cleaning section 6. Other methods of supporting the processguard 30 and the process guard support 31 in the containment chamber 2may be used in the present invention. The process guard 30 is moved inand out of the housing 38 via the set of rollers 32 a, 32 b, 32 c, and32 d, which move the process guard support 31. The roller 32 a ispreferably attached to a mechanical device capable of rotating theroller 32 a in both clockwise and counterclockwise directions so thatone end of the process guard 30 can be moved from one wall to theopposite wall so as to form a temporary border between the two sections4, 6. In other embodiments, other devices and methods may be used tomove and position the process guard 30 from the housing 38 to thecontainment chamber 2 to the position as shown in FIG. 2.

[0038]FIG. 3 illustrates a perspective view of the process guard supportmechanism in accordance with the first preferred embodiment of thepresent invention. This figure illustrates the process guard 30 andprocess guard support 31 positioned in the second mode of operationwhere the rinsing/cleaning step is performed. An adhesive, screw andnut, or the like can be used to attach the bottom side of the processguard 30 to the process guard support 31.

[0039] The process guard 30 is made from a material that is rigid enoughto support the cleaning solution as it is flowed out of the cleaningsection 6, while being flexible enough to bend as it is being stored inthe housing 38. Preferably, the process guard 30 and the support 31 aremade from materials such as plastic, metals, or coated metals that arecompatible with the chemical used in the chamber. The process guard 30is shaped in a configuration that fits inside the containment chamber 2such that the cleaning solution is prevented from entering the ECMDsection 4.

[0040] Referring back to FIG. 2, the cleaning section 6 further includesmultiple nozzles 40 for spraying the rinsing/cleaning solution 42 ontothe wafer 12. An inlet tube 44 is used to flow the cleaning solutionthrough the nozzles 40. The cleaning solution 42 may be water, acidic orbasic solutions or organic solvents. A second set of splashguards 22Bmay be positioned in the cleaning section 6 so as to prevent thecleaning solution 42 from exiting from the top section of thecontainment chamber 2.

[0041] In operation according to the first preferred embodiment of thepresent invention, after performing the ECMD process as describedearlier, the wafer holder 10 supporting the wafer 12 is verticallyraised from the deposition section 4 such that it is positioned in thecleaning section chamber 6 for the rinse, spin, and dry process. Thewafer holder 10 is vertically raised in between the process guardsupport 331 (i.e., two sets of cords) (FIG. 3). The process guard 30 isthen guided by the process guard support 31 using rollers 32 a, 32 b, 32c, 32 d into the containment chamber 2 from the housing 38 so as to forma physical border between the two sections 4, 6. The process guard 30should be flexible enough to bend during the guiding process from thehousing 38 to the containment chamber 2, but should also be rigid enoughto be guided into the slit 34. Any known apparatus and method may beused to guide the process guard 30 in and out of the housing 38. Therinsing/cleaning solution 42 is then applied to the wafer 12 through thenozzles 40. During this process, the rinsing/cleaning solution 42 thatdrips onto the process guard 30 is flowed to the housing 38 or anoutside reservoir (not shown) for storage and/or disposal. The inclineof the process guard 30 allows the used rinsing/cleaning solution 42 toflow out of the containment chamber 2.

[0042] The cleaning process of the present invention is a spin, rinse,and dry process, as known in the art. The wafer holder 10 rotates thewafer 12 at a very high speed. The rinsing/cleaning solution 42 isapplied/sprayed onto the wafer surface using nozzles 40. Once thespraying is completed, the wafer is dried by the rotation of the waferholder 10. The wafer is then transferred to the next processing station.

[0043] The present invention contemplates adding another processing stepsuch that the wafer 12 is cleaned before and after performing the ECMD.For example, the wafer 12 can be cleaned first in the cleaning section 6before performing the ECMD process in ECMD section 4. Then, the wafer 12can be cleaned for the second time in the cleaning section 6. Thesolution used in the cleaning section 6 may contain chemicals that canmodify the surface of the wafer 12. For example, a mild etching solutioncan be used for this purpose.

[0044] FIGS. 4-7 illustrate cross sectional views of the secondpreferred embodiment of the present invention. In this secondembodiment, multiple flaps are used to separate the lower processingsection from the upper processing section. For example, when flaps 150are in the vertical position as shown in FIG. 4, a first process can beperformed in the lower section. On the other hand, when the flaps 150are in the substantially horizontal position as shown in FIG. 6, asecond process can be performed in the upper section.

[0045] Described hereinafter in greater detail is one possibleapplication of the present invention where the first process that iscarried out in the lower section is a depositing/polishing process andthe second process that is carried out in the upper section is arinsing/cleaning process.

[0046] Referring back to FIG. 4, a containment chamber 100 includes twosections similar to that described above, a depositing/polishing lowersection 104 and a rinsing/cleaning top section 106. In the first mode ofoperation, a depositing/polishing is performed in the section 104, andin the second mode of operation, a rinsing/cleaning step is performed inthe section 106.

[0047] In the first mode of operation in accordance with the secondpreferred embodiment of the present invention, a wafer holder 10, asdescribed above, supports a wafer 12 as deposition and polishing processis performed in the lower section 104. The flaps 150 via linkageshafts/rollers 152 are positioned vertically such that the wafer holder10 using shaft 16 can be lowered into the lower section 104.

[0048] During the deposition and polishing process, a conductivematerial is applied in holes, trenches, and/or other desired areas inthe wafer 12 using an electrolyte solution while the conductive materialis polished from undesired areas on the wafer. The deposition/polishingapparatus 120 is similar to that described earlier herein. In theexample provided herein, the apparatus 120 includes a pad assembly 123having a pad 124 placed on an anode 126 for depositing/polishing theconductive material on the wafer 12. The chamber 100 also includessealing and anti-splash portion 134 and O-ring 132 to prevent anysolution from exiting the chamber 100.

[0049]FIG. 5 illustrates a cross sectional view of a second preferredembodiment of the present invention during the transition from adepositing/polishing process to a rinsing/cleaning process. After thedeposition and polishing process in the lower section 104, the waferholder 10 is raised using shaft 16 to approximately its uppermostposition. The flaps 150 are then moved from their vertical position totheir horizontal position using the linkage shaft/rollers 152. Once theflaps 150 are in their final horizontal position, the second mode ofoperation (rinsing/cleaning) can be carried out.

[0050]FIG. 6 illustrates a cross sectional view of a second preferredembodiment of the present invention for use during a rinsing/cleaningprocess. From its uppermost position of the wafer holder 10 in FIG. 5,the wafer holder 10 is lowered slightly to a position that is suitablefor rinsing/cleaning the wafer 12. The rinsing/cleaning process of thewafer 12 is similar to that described earlier herein, where the rinsingcleaning solution is provided via nozzles 140 and other inlet tubes thatare commonly used in this field. In other embodiments, the wafer 12 maybe brush cleaned using a brush as known in the art. It should be notedthat the used rinsing/cleaning solution that drips down from the wafer12 is guided by the flaps 150 into outlet channels 151 along the sidewalls of the upper section 106. In this manner, the used solution isdrained out of the chamber 100 using outlet channels 151 , which isdescribed in more detail below.

[0051] The flaps 150 are made from a material that is rigid enough tosupport the cleaning solution as it is flowed out of therinsing/cleaning section 106. Preferably, the flaps 150 are made frommaterials such as plastic or teflon, or any other material that iscompatible with the chemical used in the chamber.

[0052] An additional advantage of using the second embodiment of thepresent invention is that when the chamber 100 is not being used, theflaps 150 can be positioned in a horizontal position to enclose thelower section 104 of the chamber 100. When the lower section 104 isenclosed using flaps 150, this reduces/minimizes electrolyte solutionevaporation from the chamber 100, thereby saving money and resources forthe manufacturer.

[0053] During the rinsing/cleaning process according to either the firstor second preferred embodiments, the wafer 12 can be rotated using thewafer holder 10 at 5 to 200 rpm, but preferably between 10 to 150 rpm.The rinsing/cleaning solution can be applied to the wafer 12 at 2 to2000 ml/minute, but preferably between 5 to 800 ml/minute for a periodranging from 5 to 15 seconds. Thereafter, the wafer 12 may be spun driedby rotating the wafer 12 at 500 to 2500 rpm, but preferably between 800to 2000 rpm for a period of about 10 seconds. After suchrinsing/cleaning process, the wafer 12 can be transferred from theeither chamber 2, 100 using the wafer holder 10 to another processingdevice.

[0054]FIG. 7 illustrates a perspective view of the upper chamber inaccordance with the second preferred embodiment of the presentinvention. Flaps 150 can be moved up and down around the axis of thelinkage shaft/rollers 152 using motors 153. Further, the flaps 150 aredesigned such that when they are in the closed position, the usedsolution falling on the flaps 150 is flowed into the outlet channels 151along the walls of the upper section 106. The used solution is thendrained from the outlet channels 151 into a reservoir (not shown) forrecycling and/or disposal.

[0055]FIG. 8 illustrates a cross sectional view of yet another preferredembodiment of the present invention. In this embodiment, the wafer 12 isrinsed through sprayers 141 that are mounted on the flaps 150. Therinsing/cleaning solution can be fed to the sprayers 141 through varioustubes/pipes that are located either inside/outside the flaps 150.Although FIG. 8 illustrates one sprayer 141 mounted per each flap 150,more or less than one sprayer can be mounted on either flap 150.

[0056] Sprayers 141 can also be used to blow air/gases such that thewafer 12 can be dried quickly. It is also possible to use differentsprayers that are used for different purposes (i.e., one for liquid andone for gas). In other embodiments, both the sprayers mounted on theflaps 150 (FIG. 8) and side mounted nozzles (FIG. 6) can be used tosimultaneously rinse/clean the wafer 12.

[0057] Although a specific application of the present inventioninvolving deposition in the lower section and rinsing/cleaning in theupper section has been described in detail, the present inventioncontemplates performing other types of processes in the upper and lowersections, which sections are separated by the movable process guard orflaps. In this case, the nozzles and/or sprayers can be used to providevarious “process solutions” or “process gases” to the wafer surface. Forexample, as described above, if the upper section is used for cleaning,the process solution can be a cleaning solution. If, on the other hand,the process in the upper section is an etching or surface modificationprocess, then the process solution may be a mild etching solution.Furthermore, process gases such as O₂, CF₄, CL₂, NH₂, etc., can beintroduced onto the wafer surface in the upper section. The wafer mayalso be heated (using lamp, etc.) when the gas is introduced such thatsurface modifications can result. For example, O₂ gas may be used tooxidize the wafer surface prior to performing the next processing stepin the lower section.

[0058] In other instances, the upper section may be used for deposition,which in this case, the process solution may contain chemicals thatcause film growth on the wafer surface as a result of the appliedsolution. Electroless material deposition solutions such as electrolessnickel, palladium, gold, copper, platinum, and the like are examples ofprocess solutions that can be used in the upper section to deposit afilm on the wafer surface.

[0059] The processing sequence as described above in the upper and lowersections may be changed, thus allowing for multiple processes to becarried out in each section. For example, the wafer surface may first becleaned, etched, modified, etc., using a cleaning/etching solution inthe upper section with the flaps/process guard in their /its appropriateposition(s). After cleaning/etching the wafer surface, the wafer canfurther be rinsed/dried again in the upper section. Thereafter, afterrepositioning the flaps/process guard, the wafer can be lowered into thelower section where metal deposition and polishing can be carried out.The deposited metal may be Cu, Au, Pt, Ni, Co, Ni-Co alloy, and thelike. After deposition, the wafer can again be raised to the uppersection such that the wafer surface can be cleaned. After this cleaningprocess, a deposition step can be carried out in the upper section, asdescribed above. For example, after Ni deposition in the lower section,Au may be deposited over the Ni film in the upper section using anelectroless Au solution applied (using nozzles/sprayers) over the Nicoated wafer surface. The Au solution and the wafer may further beheated at this stage. After deposition in the upper chamber, anotherrinsing and cleaning process can be carried out in upper section.

[0060] From the previous discussion, an important aspect of thisinvention is that it provides a vertically configured chamber such thatmultiple processes can be carried out in the different sections of thechamber. Sections are separated from each other using a removableprocess guard or flaps such that one chemistry used in one section doesnot effect a different chemistry used in another section. Although theexamples shown above discloses two sections, three or more sections canbe used so long as the physical height of each section and the overallheight of the chamber is kept within a reasonable limit.

[0061] For example, the vertically configured chamber can be sectionedoff into three or more distinct sections having top, middle, and bottomsections. The top section can be used for first depositing theconductive material on the wafer surface using a first set ofnozzles/sprayers and process guard/flaps, which process guard/flapsprevent(s) the depositing solution from entering the middle section, asdescribed earlier herein. The wafer can then be lowered into the middlesection after positioning the first process guard in its housing or theflaps in their vertical positions. The wafer surface can then becleaned, rinsed, etc. using a second set of nozzles/sprayer and processguard/flaps, which process guard/flaps prevent(s) the cleaning, rinsing,etc., solutions from entering the bottom section of the chamber. Thewafer can be further lowered into the bottom section of the chamber foradditional deposition after positioning the second process guard in itshousing or the flaps in their vertical positions. Thereafter, the wafercan be raised to the middle section for a second cleaning/rinsing. Ascan be appreciated, this process can continue allowing for multiplecleaning/rinsing and depositing steps.

[0062] Although specific embodiments, including specific apparatus,process steps, process parameters, materials, solutions, etc., have beendescribed, various modifications to the disclosed embodiments will beapparent to one of ordinary skill in the art upon reading thisdisclosure. Therefore, it is to be understood that such embodiments aremerely illustrative of and not restrictive of the broad invention andthat this invention is not limited to the specific embodiments shown anddescribed. Those skilled in the art will readily appreciate that manymodifications of the exemplary embodiment are possible withoutmaterially departing from the novel teachings and advantages of thisinvention.

I claim:
 1. A chamber for depositing a conductive material and cleaninga workpiece comprising: a movable guard adapted to define the chamberinto a lower section and an upper section; a deposition apparatuspositioned in the lower section for depositing the conductive materialon the workpiece; and one or more nozzles positioned on the inner wallsof the upper section for providing a cleaning solution to the workpiece.2. A chamber according to claim 1 further comprising a workpiece holderadapted to support the workpiece in the lower and upper sections.
 3. Achamber according to claim 2, wherein the workpiece holder is furtheradapted to move side to side and up and down between the lower and uppersections.
 4. A chamber according to claim 2, wherein the workpieceholder is further adapted to rotate about a first axis.
 5. A chamberaccording to claim 1, wherein the deposition apparatus comprises anelectro chemical mechanical deposition apparatus.
 6. A chamber accordingto claim 1, wherein the lower section further includes a first set ofsplashguards extending from the inner walls of the lower section.
 7. Achamber according to claim 6, wherein the upper section further includesa second set of splashguards extending from the inner walls of the uppersection and positioned above the one or more nozzles.
 8. A chamberaccording to claim 1, wherein the moveable guard is supported by a guardsupport.
 9. A chamber according to claim 8, wherein the guard supportcomprises a plurality of cords coupled to a plurality of rollers.
 10. Achamber according to claim 9, wherein the moveable guard is adapted tomove into and out of the chamber using the guard support.
 11. A chamberaccording to claim 8 further comprising a slit in one of the inner wallsand a housing such that one end of the moveable guard can be positionedwithin the slit and the other end can be positioned within the housing.12. A chamber according to claim 11, wherein the movable guard ispositioned at an angle from a horizontal plane.
 13. A chamber accordingto claim 1, wherein the moveable guard comprises a pair of flapsattached to linkage rollers.
 14. A chamber according to claim 1, whereinthe moveable guard comprises a flexible material.
 15. A chamberaccording to claim 1, wherein the one or more nozzles are furtheradapted to provide a dry gas to the workpiece.
 16. A chamber fordepositing a conductive material and cleaning a workpiece comprising: aplurality of flaps having top surfaces and adapted to define the chamberinto a lower section and an upper section; a deposition apparatuspositioned in the lower section for depositing the conductive materialon the workpiece; and one or more sprayers positioned on top surfaces ofthe plurality of flaps for providing a cleaning solution to theworkpiece.
 17. A chamber according to claim 16 further comprising aworkpiece holder adapted to support the workpiece in the lower and uppersections.
 18. A chamber according to claim 17, wherein the workpieceholder is further adapted to move side to side and up and down betweenthe lower and upper sections.
 19. A chamber according to claim 17,wherein the workpiece holder is further adapted to rotate about a firstaxis.
 20. A chamber according to claim 16, wherein the depositionapparatus comprises an electro chemical mechanical deposition apparatus.21. A chamber according to claim 16, wherein the lower section furtherincludes an O-ring and a sealing and anti-splash portion.
 22. A chamberaccording to claim 16, wherein the upper section includes one or morenozzles positioned on the inner walls of the upper section for providingthe cleaning solution to the workpiece.
 23. A chamber according to claim16, wherein the plurality of flaps are connected to linkage rollers formoving the plurality of flaps from vertical to horizontal or horizontalto vertical positions.
 24. A chamber according to claim 16, wherein theupper chamber includes outlet channels for removing the cleaningsolution from the chamber.
 25. A chamber according to claim 16, whereinthe one or more sprayers are further adapted to provide a dry gas to theworkpiece.
 26. A method of depositing a conductive material on aworkpiece and cleaning the workpiece in a chamber, the method comprisingthe steps of: lowering the workpiece into a lower section of thechamber; depositing the conductive material on the workpiece in thelower section of the chamber; raising the workpiece from the lowersection to an upper section of the chamber; positioning a movable guardbetween the lower section and the upper section; and cleaning theworkpiece in the upper section.
 27. A method according to claim 26,wherein the lowering and raising steps comprise the step of providing aworkpiece holder, wherein,the workpiece holder is lowered and raisedusing a moveable shaft attached to the workpiece holder.
 28. A methodaccording to claim 26, wherein the depositing step further comprises thestep of depositing the conductive material using an electro chemicalmechanical deposition process.
 29. A method according to claim 26,wherein the cleaning step further comprises the steps of: spinning theworkpiece about a first axis; providing a cleaning solution to theworkpiece; and drying the workpiece by spinning the workpiece.
 30. Amethod according to claim 29, wherein the providing step furthercomprises spraying the cleaning solution from a plurality of nozzlespositioned on the inner walls of the upper chamber.
 31. A methodaccording to claim 29, wherein the moveable guard comprises a pluralityof flaps connected to linkage rollers and wherein the providing stepfurther comprises spraying the cleaning solution from a plurality ofsprayers positioned in the upper surfaces of the plurality of flaps. 32.A method according to claim 29, wherein the moveable guard comprises aflexible guard attached to a guard support.
 33. A method according toclaim 32, wherein the guard support comprises a plurality of cordscoupled to a plurality of rollers.
 34. A method according to claim 33,wherein the flexible guard is adapted to move into and out of thechamber using the guard support.
 35. A method according to claim 29further comprising a slit in an inner wall and a housing such that oneend of the flexible guard can be positioned within the slit and theother end can be positioned within the housing.
 36. A method accordingto claim 29, wherein after the cleaning solution has been provided tothe workpiece, the solution is flowed out the chamber using the moveableguard.
 37. A method according to claim 29, wherein the drying stepfurther comprises blowing a dry gas to the workpiece.
 38. A methodaccording to claim 26, wherein the step of positioning the moveableguard includes the step of positioning the guard at an angle from ahorizontal plane.
 39. A method according to claim 38, wherein the angleis between 5-60 degrees.
 40. A single containment chamber for depositinga conductive material and cleaning a surface of a semiconductorworkpiece comprising a movable guard, the movable guard adapted to splitthe containment chamber into a lower section and an upper section suchthat the newly created upper section does not contain substantially anyof the chemicals used in the newly created lower section, and whereinthe lower section is used to deposit the conductive material on thesurface of the semiconductor workpiece and the upper section is used toclean the surface of the semiconductor workpiece.
 41. A singlecontainment chamber according to claim 40 further comprising a workpiecesupport adapted to support the workpiece, wherein the workpiece supportis adapted to move from the lower section to the upper section and fromthe upper section to the lower section.
 42. A single containment chamberaccording to claim 40, wherein the lower section includes an electrochemical mechanical apparatus for depositing the conductive material onthe surface of the workpiece.
 43. A single containment chamber accordingto claim 42, wherein the lower section further includes a first set ofsplashguards extending from the inner walls of the lower section.
 44. Asingle containment chamber according to claim 40, wherein the uppersection includes a plurality of nozzles extending from the inner wallsof the upper section, the plurality of nozzles being adapted to providea cleaning solution onto the surface of the workpiece.
 45. A singlecontainment chamber according to claim 44, wherein the upper sectionfurther includes splashguards extending from the inner walls of theupper section above the plurality of nozzles.
 46. A single containmentchamber according to claim 40, wherein the moveable guard is supportedby a guard support.
 47. A single containment chamber according to claim46, wherein the guard support comprises a plurality of cords coupled toa plurality of rollers.
 48. A single containment chamber according toclaim 47, wherein the moveable guard is adapted to move into and out ofthe chamber using the guard support.
 49. A single containment chamberaccording to claim 40 further comprising a slit in one of the innerwalls and a housing such that one end of the moveable guard can bepositioned within the slit and the other end can be positioned withinthe housing.
 50. A single containment chamber according to claim 40,wherein the moveable guard comprises a pair of flaps attached to linkagerollers.
 51. A chamber for depositing a conductive material and cleaninga workpiece comprising: means for separating the chamber into a lowersection and an upper section; means for depositing the conductivematerial on the workpiece in the lower section of the chamber; and meansfor cleaning the workpiece in the upper section of the chamber.
 52. Achamber for carrying out at least two processing steps on a workpiece,comprising: a movable guard adapted to define the chamber into a lowersection and an upper section; means for carrying out a first processingstep in the lower section of the chamber; and means for carrying out asecond processing step in the upper section of the chamber.
 53. Achamber according to claim 52 further comprising a workpiece holderadapted to support the workpiece in the lower and upper sections.
 54. Achamber according to claim 53, wherein the workpiece holder is furtheradapted to move side to side and up and down between the lower and uppersections.
 55. A chamber according to claim 53, wherein the workpieceholder is further adapted to rotate about a first axis.
 56. A chamberaccording to claim 52, wherein the first processing step comprises oneof depositing on, polishing, etching, and modifying a surface on theworkpiece.
 57. A chamber according to claim 52, wherein the secondprocessing step comprises one of rinsing, cleaning, depositing on,etching, modifying, and drying a surface on the workpiece.
 58. A chamberaccording to claim 52, wherein the moveable guard is supported by aguard support.
 59. A chamber according to claim 58, wherein the guardsupport comprises a plurality of cords coupled to a plurality ofrollers.
 60. A chamber according to claim 59, wherein the moveable guardis adapted to move into and out of the chamber using the guard support.61. A chamber according to claim 58 further comprising a slit in one ofthe inner walls and a housing such that one end of the moveable guardcan be positioned within the slit and the other end can be positionedwithin the housing.
 62. A chamber according to claim 52, wherein themovable guard is positioned at an angle from a horizontal plane.
 63. Achamber according to claim 52, wherein the moveable guard comprises apair of flaps attached to linkage rollers.
 64. A chamber according toclaim 52, wherein the moveable guard comprises a flexible material. 65.A method of carrying out at least two processing steps on a workpiece,the method comprising the steps of: lowering the workpiece into a lowersection of the chamber; carrying out a first processing step on theworkpiece in the lower section of the chamber; raising the workpiecefrom the lower section to an upper section of the chamber; positioning amovable guard between the lower section and the upper section; andcarrying out a second processing step on the workpiece in the uppersection.
 66. A method according to claim 65, wherein the firstprocessing step comprises one of depositing on, polishing, etching, andmodifying a surface on the workpiece.
 67. A method according to claim65, wherein the second processing step comprises one of rinsing,cleaning, depositing on, etching, modifying, and drying a surface on theworkpiece.
 68. A method of carrying out at least two processing steps ona workpiece, the method comprising the steps of: carrying out a secondprocessing step on the workpiece in an upper section after positioning amovable guard between the upper section and a lower section of thechamber; repositioning the movable guard such that the workpiece can belowered into the lower section of the chamber; lowering the workpieceinto the lower section of the chamber; carrying out a first processingstep on the workpiece in the lower section of the chamber.
 69. A methodaccording to claim 68, wherein the first processing step comprises oneof depositing on, polishing, etching, and modifying a surface on theworkpiece.
 70. A method according to claim 68, wherein the secondprocessing step comprises one of rinsing, cleaning, depositing on,etching, modifying, and drying a surface on the workpiece.
 71. A methodaccording to claim 70, wherein the step of etching or modifying furthercomprises the step of providing a gas to the surface of the workpiecefrom a group consisting essentially of O₂, CF₄, Cl₂, and NH₂.
 72. Amethod according to claim 71 further comprising the step of heating theworkpiece while the gas is provided to the surface of the workpiece.